Title :
Visible light generation in semiconductor nano-pillars
Author :
Machado, Paulo César M ; Osório, Francisco A P ; Borges, Antônio Newton
Author_Institution :
Escola de Engenharia Eletrica e de Computacao, Brazil
Abstract :
We report a calculation of the two first energy levels of semiconductor nano-pillars as a function of their diameters. We have considered GaAs and InAs self-assembled quantum dots disk-like shape. The region where the visible light is emitted was delimited. Encapsulating quantum dots with diameters from this region allows the fabrication of white light-emitting diodes.
Keywords :
III-V semiconductors; encapsulation; energy states; gallium arsenide; indium compounds; light emitting diodes; nanostructured materials; self-assembly; semiconductor quantum dots; GaAs; InAs; LED; diameters; energy levels; light generation; quantum dot encapsulation; self-assembled quantum dots disk-like shape; semiconductor nanopillars; white light-emitting diode fabrication; Differential equations; Effective mass; Energy states; Gallium arsenide; Light emitting diodes; Optoelectronic devices; Quantum dots; Schrodinger equation; Semiconductor diodes; Shape;
Conference_Titel :
Microwave and Optoelectronics, 2005 SBMO/IEEE MTT-S International Conference on
Print_ISBN :
0-7803-9341-4
DOI :
10.1109/IMOC.2005.1580021
