Title :
Small signal analysis of a SOI MOSFET device with a novel area efficient body contact
Author :
Daghighi, Arash ; Osman, Mohamed A.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
Abstract :
The small signal parameters of novel area efficient source-to-body contacted SOI MOSFET are determined using three dimensional device simulations and compared to conventional body contacted and floating body PD SOI MOSFETs. The proposed device exhibits higher drive current with complete suppression of floating body effects. The gate transconductance (gm) shows improvement by 16% at VGS=1 V and VDS=2 V compared to conventional BTS structures. The drain conductance (gds) and gate-to-source capacitance Cgs are similar to conventional BTS structures.
Keywords :
MOSFET; capacitance; electric admittance; electrical contacts; semiconductor device metallisation; semiconductor device models; silicon-on-insulator; 1 V; 2 V; 3D device simulations; BTS structures; Si-SiO2; area efficient body contact; body contacted PD SOI MOSFET; drain conductance; drive current; floating body PD SOI MOSFET; floating body effects; gate transconductance; gate-to-source capacitance; small signal analysis; source-to-body contacted SOI MOSFET; Analytical models; Capacitance; Computational modeling; Computer science; Contacts; MOSFET circuits; Radio frequency; Signal analysis; Transconductance; Voltage;
Conference_Titel :
SoutheastCon, 2005. Proceedings. IEEE
Print_ISBN :
0-7803-8865-8
DOI :
10.1109/SECON.2005.1423223
