Title :
Thermal switching of terahertz surface plasmon polaritons in semiconductors
Author :
Yang, T. ; Li, X.A. ; Huang, W. ; Ho, H.P.
Author_Institution :
Inst. of Adv. Mater., Nanjing Univ. of Posts & Telecommun., Nanjing, China
Abstract :
Terahertz surface plasmon polaritons propagating in the surface of semiconductor are switched by varying the plasma frequency through a temperature effect. A device design is proposed to achieve the desired functionality.
Keywords :
III-V semiconductors; indium compounds; polaritons; semiconductor devices; surface plasmons; switching; terahertz wave spectra; InAs-InSb; device design; plasma frequency variation; semiconductors; temperature effect; terahertz surface plasmon polaritons; thermal switching; Charge carrier density; Frequency control; Frequency modulation; Permittivity; Plasma temperature; Switches;
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2012 17th
Conference_Location :
Busan
Print_ISBN :
978-1-4673-0976-9
Electronic_ISBN :
2166-8884
DOI :
10.1109/OECC.2012.6276800
