Analysis of electro-thermal-stress failure of the LDMOS FET under HPM pulses

Author

Wei-Feng Zhou ; Liang Zhou ; Jun-Fa Mao ; Hong-Li Peng ; Wen-Yan Yin

Author_Institution

Key Lab. of Minist. of Educ. of Design & Electromagn. Compatibility of High Speed Electron., Shanghai Jiao Tong Univ., Shanghai, China

fYear

2013

fDate

12-15 Dec. 2013

Firstpage

205

Lastpage

208

Abstract

This article discusses a laterally diffused MOS (LDMOS) FET´s thermal-stress failure test experiment under high-power microwave (HPM) pulses with different pulse widths and describes the 2-D transient coupled electro-thermal-stress (E-T-S) simulation of its structure model via finite-element method (FEM). The test experiment system mainly consists of an HPM generator, an oscilloscope, some attenuators and couplers. The thermal-stress failure is explained by some experimental phenomenon and the failure temperature is calculated via the FEM code with the measured HPM pulses. Furthermore, the transient thermal and stress distributions of the high power device are achieved and the temperature profile is verified by the commercial software of COMSOL.

Keywords

failure analysis; finite element analysis; power MOSFET; thermal stresses; 2D transient coupled electro-thermal-stress simulation; COMSOL; E-T-S simulation; FEM; HPM generator; HPM pulses; LDMOS FET; attenuators; couplers; finite-element method; high power device; high-power microwave pulses; laterally diffused MOS FET; oscilloscope; stress distributions; structure model; temperature profile; thermal-stress failure test experiment; transient thermal distributions; Copper; Electric breakdown; Finite element analysis; Mathematical model; Stress; Temperature measurement; Thermal stresses; FEM; HPM pulse; LDMOS; electro-thermal-stress; interconnection; structure model; thermal and stress failure;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2013 IEEE

Conference_Location

Nara

Print_ISBN

978-1-4799-2313-7

Type

conf

DOI

10.1109/EDAPS.2013.6724425

Filename

6724425