Thermal modeling, analysis, and management of high-power GaN transistors

A thermal circuit model for high power GaN transistor is constructed in this paper. Based on this model, the temperature rise in GaN transistor can be fast captured accurately. Further, the graphene layer is inserted below GaN layer to serve as heat spreader. It has been demonstrated that by introducing graphene layer, the maximum temperature rise of GaN transistor can be effectively suppressed, and its performance and reliability can be thereby improved.