• DocumentCode
    30840
  • Title

    Multichannel DFB Laser Arrays Fabricated by Upper SCH Layer SAG Technique

  • Author

    Can Zhang ; Song Liang ; Hongliang Zhu ; Liangshun Han ; Wei Wang

  • Author_Institution
    Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China
  • Volume
    50
  • Issue
    2
  • fYear
    2014
  • fDate
    Feb. 2014
  • Firstpage
    92
  • Lastpage
    97
  • Abstract
    Multiwavelength laser arrays (MWLAs) fabricated by a novel upper separate confinement heterostructure (SCH) layer selective area growth (SAG) technique are studied in comparison with laser arrays fabricated by the conventional multiquantum well (MQW) SAG technique. For MWLAs by the MQW SAG, the range of the laser emission of the array is smaller than the span of the PL wavelengths of the MQW active layers. In addition, the material quality of the MQW layer degrades greatly as the width of the SAG strips is increased. Thus, the MWLAs fabricated by the method have scattered L-I characters and large fluctuation of wavelength spacings. In contrast, the MWLAs fabricated by the novel SAG method have much better wavelength spacing uniformity than those by MQW SAG, which is comparable to or better than the MWLAs fabricated by E-beam direct writing. Furthermore, the upper SCH layer SAG technique is suitable for the fabrication of MWLAs with wavelength interval, which is a challenge even for E-beam technique. In the SCH layer SAG, the MQW layer is untouched, and the same is true for all the laser elements in an array. The metal organic vapor phase epitaxies ability to control the material properties with high accuracy can be fully utilized for the fabrication of MWLAs. Combined with partially gain-coupled distributed feedback structures, the technique is promising for the fabrication of low-cost, high-quality MWLAs.
  • Keywords
    distributed feedback lasers; optical fabrication; quantum well lasers; semiconductor epitaxial layers; semiconductor laser arrays; vapour phase epitaxial growth; E-beam direct writing; MQW SAG; MQW active layers; MQW layer; PL wavelengths; SAG strip width; array laser emission; conventional multiquantum well SAG technique; high-quality MWLA fabrication; laser element; low-cost MWLA fabrication; material properties; material quality; metal organic vapor phase epitaxy ability; multichannel DFB laser array fabrication; multiwavelength laser arrays; partially gain-coupled distributed feedback structures; scattered L-I characters; upper SCH layer SAG technique; upper separate confinement heterostructure layer selective area growth technique; wavelength interval; wavelength spacing fluctuation; wavelength spacing uniformity; Epitaxial growth; Fabrication; Laser modes; Quantum well devices; Semiconductor laser arrays; Distributed feedback laser array; holographic gratings; selective area growth;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2013.2295382
  • Filename
    6687202