Novel solar cell with MOS diode for improvement of conversion efficiency

Author

Kobayashi, Takehiko ; Matsuo, Naoto ; Heya, Akira

Author_Institution

Grad. Sch. of Eng., Univ. of Hyogo, Himeji, Japan

fYear

2013

fDate

5-6 June 2013

Firstpage

40

Lastpage

41

Abstract

We presented the novel structure of the solar cell that has the metal oxide semiconductor (MOS) diode at the side wall of the electricity generation layer. The purpose of this research is to simulate influence of the field-effect on the recombination of carriers and show the increase of the conversion efficiency of the solar cell. The increase ratios of the conversion efficiency under the gate voltage application are 1.62 and 1.56 times for c-Si and p-Si in comparison with non-gate application equal to the conventional structure, respectively.

Keywords

MOS integrated circuits; semiconductor diodes; solar cells; MOS diode; conversion efficiency; electricity generation layer; field-effect; gate voltage application; metal oxide semiconductor diode; nongate application; side wall; solar cell; Crystals; Electricity; Electrodes; Impurities; Logic gates; Photovoltaic cells; Radiative recombination; Convertion efficiency; MOS; Solar cell;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for

Conference_Location

Suita

Print_ISBN

978-1-4673-6106-4

Type

conf

DOI

10.1109/IMFEDK.2013.6602231

Filename

6602231