The electrode and inter-connection for ferroelectric memory devices

Author

Takasu, Hidemi

Author_Institution

Semicond. Res. & Dev. Headquarters, ROHM CO. LTD., Kyoto, Japan

fYear

1999

fDate

1999

Firstpage

6

Lastpage

8

Abstract

The ferroelectric memory is not only an ideal memory, with its clear advantages including nonvolatility, low power consumption, high endurance and high speed writing, but also the most suitable device for embedded memory applications. However, ferroelectric films have some problems such as fatigue and process degradation. To solve these problems, the electrode materials and interconnect process are very important. This paper describes the development of electrode and interconnect technologies for ferroelectric memories

Keywords

electrodes; fatigue; ferroelectric storage; ferroelectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated memory circuits; random-access storage; electrode materials; electrodes; embedded memory applications; endurance; fatigue; ferroelectric films; ferroelectric memories; ferroelectric memory; ferroelectric memory devices; high speed writing; interconnect process; interconnect technology; interconnections; nonvolatility; power consumption; process degradation; Capacitors; Degradation; Electrodes; Fatigue; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Polarization; Random access memory; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787062

Filename

787062