Title :
Flexible ZnO thin-film transistors on plastic substrates produced at room temperature
Author :
Sun, Yue ; Kimura, Yuichi ; Maemoto, T. ; Sasa, S.
Author_Institution :
Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan
Abstract :
We fabricated flexible ZnO-based thin-film transistors (TFTs) at room temperature and characterized the TFTs. ZnO films were deposited on polyethylene naphthalate (PEN) substrates by pulsed laser deposition (PLD). We succeeded in fabricating ZnO TFTs on PEN substrates. A 4-μm-long gate device had a transconductance of 21.5 mS/mm and an on/off ratio of 1.4×107. The ZnO TFTs operated even at a bending radius of 10 mm without any significant change in their operation characteristics.
Keywords :
II-VI semiconductors; pulsed laser deposition; semiconductor device manufacture; thin film transistors; wide band gap semiconductors; zinc compounds; TFT; ZnO; plastic substrates; polyethylene naphthalate substrates; pulsed laser deposition; size 10 mm; size 4 mum; temperature 293 K to 298 K; thin-film transistors; transconductance; Thin film transistors; Zinc oxide; Zinc Oxide; flexible; plastic substrate; room-temperature process; thin-film transistor;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
Conference_Location :
Suita
Print_ISBN :
978-1-4673-6106-4
DOI :
10.1109/IMFEDK.2013.6602240
