• DocumentCode
    3084568
  • Title

    Fabrication of zinc oxide thin film transistors using a facing-targets sputtering method

  • Author

    Okada, Yoshitaka ; Morita, Ryuji ; Ogata, Kohichi ; Koike, K. ; Maemoto, T. ; Yano, M. ; Sasa, S.

  • Author_Institution
    Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan
  • fYear
    2013
  • fDate
    5-6 June 2013
  • Firstpage
    62
  • Lastpage
    63
  • Abstract
    IZO thin-film transistors fabricated using facing targets sputtering and a heat treatment at 400°C showed a very high transconductance as high as 91 mS/mm.
  • Keywords
    heat treatment; indium; semiconductor doping; sputtering; thermal management (packaging); thin film transistors; zinc compounds; ZnO:In; facing-targets sputtering method; heat treatment; temperature 400 C; transconductance; zinc oxide thin film transistors; Films; Heating; Facing-Targets Sputtering; Thin Film Transistor; Zinc Oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai (IMFEDK), 2013 IEEE International Meeting for
  • Conference_Location
    Suita
  • Print_ISBN
    978-1-4673-6106-4
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2013.6602241
  • Filename
    6602241
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3084568