Title :
Etch process development for FLARETM for dual damascene architecture using a N2/O2 plasma
Author :
Thompson, H.W. ; Vanhaelemeersch, S. ; Maex, K. ; Van Ammel, A. ; Beyer, G. ; Coenegrachts, B. ; Vervoort, I. ; Waeterloos, J. ; Struyf, H. ; Palmans, R. ; Forester, L.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
In this article, the feasibility of via and trench etch of FLARE TM, a low-k organic material product from AlliedSignal Inc. in dual damascene architectures for 0.25 μm applications is described. The effects of O2 concentration and flow rate on the etch rate and the etch profile of FLARETM during etching in oxygen reactive ion etch plasmas have been studied. Best via and trench profiles are obtained for a 25/5 nitrogen-to-oxygen ratio; no undercut of the hard mask is observed at a good etch rate. The feasibility of via filling with a low temperature W process and Cu fill of the trenches in a damascene structure has been demonstrated
Keywords :
dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; nitrogen; organic compounds; oxygen; sputter etching; Cu; Cu trench fill; FLARE low-k organic material; N2-O2; N2/O2 plasma etch; O2 concentration; O2 flow rate; W; damascene structure; dual damascene architecture; etch process development; etch profile; etch rate; hard mask undercutting; low temperature W via fill process; nitrogen-to-oxygen ratio; oxygen reactive ion etch plasmas; trench etch; trench profile; via etch; via filling; via profile; Conducting materials; Copper; Dry etching; Filling; Fluid flow; Organic materials; Plasma applications; Plasma temperature; Resists; Sputter etching;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787078
