A new pad-scanning, local-CMP (PASCAL-CMP) technique for reliable Cu-damascene interconnect formation

Author

Hayashi, Y. ; Onodera, T. ; Sasaki, N. ; Tanaka, K. ; Samitu, Y.

Author_Institution

ULSI Res. Lab., NEC Corp., Sagamihara, Japan

fYear

1999

fDate

1999

Firstpage

100

Lastpage

102

Abstract

A new pad-scanning, local-CMP (PASCAL-CMP) with an index-table wafer transfer system has been developed for Cu damascene interconnect formation. In the CMP process, a small oval pad is scanned on the face-up wafer. High-speed pad rotation under low polishing pressure is the key factor for suppression of Cu film thinning by oxide erosion and Cu dishing, resulting in reliable wide-range Cu interconnects

Keywords

ULSI; abrasion; chemical mechanical polishing; copper; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; CMP process; Cu; Cu damascene interconnect formation; PASCAL-CMP technique; SiO₂; face-up wafer; high-speed pad rotation; index-table wafer transfer system; oval pad scanning; pad-scanning local-CMP technique; polishing pressure; reliable Cu-damascene interconnect formation; Automatic control; Cleaning; Control systems; Delay; Face detection; Machine tools; National electric code; Pressure control; Silicon; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787090

Filename

787090