DocumentCode
3085149
Title
USJ formation & characterization for 65nm node and beyond
Author
Borland, J.O.
Author_Institution
J.O.B. Technologies
fYear
2004
fDate
16-16 March 2004
Firstpage
8
Lastpage
11
Abstract
Multiple new methods of forming ultrashallow junctions (USJ) are being pursued for. 6Snm node based on; I) new ion implantation hardware designs, 2) new cluster ion dopant species, 3) new zero diffusion dopant activation annealing equipment and 4) non-implantation alternative selective epi in-situ doping techniques. Also, improved accurate measurement and characterization techniques to determine the electrically active dopant level and depth : profile as opposed to the chemical (electrically inactive) dopant level and profiles are being developed.
Keywords
Annealing; Boron; Chemicals; Contamination; Doping; Electric variables measurement; Implants; Ion implantation; Pollution measurement; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Conference_Location
Shanghai, China
Print_ISBN
0-7803-8191-2
Type
conf
DOI
10.1109/IWJT.2004.1306746
Filename
1306746
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