Investigation of Ta, TaN and TaSiN barriers for copper interconnects

Author

Jiang, Qing-Tang ; Faust, Rick ; Lam, Hieu Robbie ; Mucha, Jay

Author_Institution

Nat. Semicond. Corp., Santa Clara, CA, USA

fYear

1999

fDate

1999

Firstpage

125

Lastpage

127

Abstract

The effects of Ta, TaN, and TaSiN barrier materials on Cu seed layers and subsequent electroplating were investigated. Significant agglomeration of the Cu seed on damascene trench sidewalls was observed after annealing of the seed deposited on Ta and TaN barriers. With TaSiN, a relatively smooth and continuous Cu seed layer was observed both before and after the anneal. XRD studies indicate that Cu-filled damascene lines with TaSiN barriers have the least stress and the strongest (111) texture as compared to Cu-filled lines with Ta and TaN barriers

Keywords

X-ray diffraction; annealing; chemical interdiffusion; copper; diffusion barriers; electroplating; integrated circuit interconnections; integrated circuit metallisation; internal stresses; surface texture; tantalum; tantalum compounds; Cu electroplating; Cu seed agglomeration; Cu seed layers; Cu stress; Cu(111) texture; Cu-Ta; Cu-TaN; Cu-TaSiN; Cu-filled damascene lines; Cu-filled lines; Ta barriers; TaN barriers; TaSiN barriers; XRD; annealing; barrier materials; copper interconnects; damascene trench sidewalls; smooth continuous Cu seed layer; Annealing; Argon; Atherosclerosis; Bonding; Compressive stress; Copper; Microstructure; Semiconductor materials; Silicon compounds; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787098

Filename

787098