Underlayer type dependence of EM threshold in Al-Cu interconnect

Author

Kwon, Dong-Chul ; Wee, Young-Jin ; Park, Yun-Ho ; Lee, Hyeon-Deok ; Kang, Ho-Kyu ; Lee, Moon-Yong

Author_Institution

Semicond. R&D Center, Samsung Electron. Co. Ltd., Yongin-City, South Korea

fYear

1999

fDate

1999

Firstpage

143

Lastpage

145

Abstract

The underlayer type dependence of the electromigration (EM) threshold has been investigated in the Ti (bottom)/Al-Cu and the Ti (bottom)/TiN (top)/Al-Cu structures. From the activation energies of Cu-drift and Al-drift, the beneficial effects of Ti as an Al underlayer is shown to be associated not only with higher residual tensile stress but also with higher compressive Al-Cu yield stress. The implications of underlayer optimization are also discussed

Keywords

aluminium alloys; chemical interdiffusion; circuit optimisation; copper alloys; diffusion barriers; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; internal stresses; yield stress; Al-Cu interconnect; Al-drift activation energy; AlCu-Ti; AlCu-TiN-Ti; Cu-drift activation energy; EM threshold; Ti bottom layer/Al-Cu structure.; Ti bottom layer/TiN top layer/Al-Cu structure; compressive Al-Cu yield stress; electromigration threshold; residual tensile stress; underlayer optimization; underlayer type dependence; Artificial intelligence; Compressive stress; Electromigration; Grain boundaries; Life estimation; Research and development; Residual stresses; Tensile stress; Testing; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787103

Filename

787103