Title :
Improvement of thermal stability of Ni germano-silicide for nano-scale CMOS technology
Author :
Huang, Bin-Feng ; Oh, Soon-Young ; Yun, Jang-Gn ; Park, Young-Ho ; Ji, Hee-Hwan ; Kim, Yong-Goo ; Wang, Jin-Suk ; Cha, Han-Seob ; Heo, Sang-Bum ; Lee, Jeong-Gun ; Kim, Yeong-Cheol ; Lee, Hi-Deok
Author_Institution :
Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea
Abstract :
In this paper, to enhance the thermal stability of the Ni germano-silicide especially on the doped substrate, various kinds of tri-layer structures of Ti/Ni/TiN, Ni/Ti/TiN, Co/Ni/TiN and Ni/Co/TiN were applied. Contrary to the conventional Ni silicide, two-step RTP is also applied to enhance the thermal stability of Ni germano-silicide. Among these structures, a highly stable Ni germano-silicide can be formed by Ni/Co/TiN with high Co concentration along with 2-step RTP. Co/Ni/TiN and Ti/Ni/TiN, especially Co/Ni/TiN with high Co concentration using 2-step RTP, are found to be effective in preventing the abnormal increase of sheet resistance on the As doped substrate during post-silicidation annealing higher than 613°C.
Keywords :
CMOS integrated circuits; integrated circuit metallisation; nickel; nickel compounds; rapid thermal annealing; rapid thermal processing; thermal stability; titanium; titanium compounds; 613 degC; Co/Ni/TiN; Ni germano-silicide; Ni/Co/TiN; Ni/Ti/TiN; Ti/Ni/TiN; doped substrate; nano-scale CMOS technology; sheet resistance; thermal stability; tri-layer structures; two-step RTP; Annealing; CMOS technology; Educational technology; Germanium silicon alloys; Rapid thermal processing; Silicides; Silicon germanium; Substrates; Thermal stability; Tin;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306777
