DocumentCode
3086072
Title
Analysis of dopant diffusion and defects in Fin structure using an atomistic kinetic Monte Carlo approach
Author
Noda, Toshio ; Kambham, A.K. ; Vrancken, C. ; Thean, A. ; Horiguchi, Naoto ; Vandervorst, W.
Author_Institution
Panasonic Corp., Uozu, Japan
fYear
2013
fDate
9-11 Dec. 2013
Abstract
An analysis of dopant diffusion and defects in 3D Fin structure using an atomistic lattice kinetic Monte Carlo (KMC) approach are shown. Atomistic KMC simulations are compared with 3D methodology of Atom Probe Tomography (APT). Atomistic dopant distribution in 3D Fin structure is shown. KMC simulation shows that implant temperature has an impact on amorphization and residual defects and dopant-defect complexes are formed at top-of-Fin and edge-of-Fin-side after SPER.
Keywords
MOSFET; Monte Carlo methods; amorphisation; crystal defects; diffusion; semiconductor doping; 3D fin structure; amorphization; atom probe tomography; atomistic dopant distribution; atomistic lattice kinetic Monte Carlo approach; dopant defect complexes; dopant diffusion; residual defects; Annealing; Implants; Kinetic theory; Monte Carlo methods; Semiconductor process modeling; Silicon; Three-dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location
Washington, DC
Type
conf
DOI
10.1109/IEDM.2013.6724570
Filename
6724570
Link To Document