DocumentCode :
3086115
Title :
Sub-micron silicon RF IC technologies: "an overview"
Author :
Lovelace, D.K. ; Finol, J.L. ; Durec, J.C.
Author_Institution :
Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA
Volume :
3
fYear :
1998
fDate :
7-12 June 1998
Firstpage :
1859
Abstract :
Silicon based semiconductors have become the standard active device technology of choice in today´s cost and performance driven consumer wireless products. No longer is silicon technology confined to low frequency analog and digital processing functions. Silicon devices have now reached high frequency performance levels which allow them to be used almost exclusively in the RF section of many wireless communication circuits. This paper deals with the issues involved in employing silicon IC technologies to low cost, low power, RF circuits.
Keywords :
UHF integrated circuits; elemental semiconductors; integrated circuit technology; monolithic integrated circuits; reviews; silicon; Si; consumer wireless products; low power RF circuits; submicron Si RFIC technologies; wireless communication circuits; Costs; Cutoff frequency; Equations; MOSFET circuits; Radio frequency; Radiofrequency integrated circuits; Silicon; Temperature; Transconductance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-4471-5
Type :
conf
DOI :
10.1109/MWSYM.1998.700849
Filename :
700849
Link To Document :
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