Title :
Magnetointersubband scattering oscillations of two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
Author :
Tang, Ning ; Shen, Bo ; Tao, Chunmin ; Chen, Dunjun ; Gui, Yongsheng ; Jiang, Chunping ; Qiu, Zhijun ; Zhang, Rong ; Zheng, Youdou ; Shaoling Gu ; Chu, Junhao
Author_Institution :
Jiangsu Provincial Key Lab. of Photonic & Electron. Mater. Sci. & Technol., Nanjing Univ., China
Abstract :
Magnetointersubband scattering (MIS) oscillations of two-dimensional electron gas (2DEG) in unintentionally doped Al0.22Ga0.78N/GaN heterostructures have been investigated by means of magnetotransport measurements at low temperatures and high magnetic fields. It is found that the MIS oscillations become slightly weaker with increasing temperature and become dominant with increasing temperature. Due to the different temperature dependence between the Shubnikov-de Haas (SdH) and the MIS oscillations, it is observed that the SdH oscillations modulated strongly by the MIS oscillations between 10 K and 17 K while the modulations are very weak at other temperatures.
Keywords :
III-V semiconductors; Shubnikov-de Haas effect; aluminium compounds; gallium compounds; interface states; semiconductor heterojunctions; two-dimensional electron gas; wide band gap semiconductors; 10 to 17 K; Al0.22Ga0.78N-GaN; AlxGa1-xN/GaN heterostructures; Shubnikov-de Haas oscillations; magnetointersubband scattering oscillations; temperature dependence; two-dimensional electron gas; unintentionally doped Al0.22Ga0.78N/GaN heterostructures; Electromagnetic scattering; Electrons; Frequency; Gallium nitride; Laboratories; Magnetic field measurement; Magnetic separation; Magnetoresistance; Particle scattering; Temperature measurement;
Conference_Titel :
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN :
0-7803-8191-2
DOI :
10.1109/IWJT.2004.1306793
