Synthesis of monolayer MoS2 with seed promoters by chemical vapor deposition at low temperature

Author

Gu Pinchao ; Zhang Kailiang ; Feng Yulin ; Wang Fang ; Miao Yinping ; Han Yemei ; Cao Rongrong ; Zhang Hanxia

Author_Institution

Tianjin Key Lab. of Film Electron. & Commun. Devices, Tianjin Univ. of Technol., Tianjin, China

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

3

Abstract

In this paper, large area monolayer MoS₂ was prepared with chemical vapor deposition (CVD) utilizing seed promoters, perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA). The process conditions including seed promoter concentration, temperature and the flow rate of carrier gas were optimized, and the obtained MoS₂ is characterized by AFM and optical microscopy. The AFM results show that the thickness of MoS₂ is about 0.7nm, which indicates that the MoS₂ is monolayer. It is found that large area of monolayer MoS₂ may be got at relatively low temperature 650°C with low concentration of PTCDA.

Keywords

atomic force microscopy; chemical vapour deposition; molybdenum compounds; monolayers; optical microscopy; organic compounds; AFM; CVD; MoS₂; PTCDA; atomic force microscopy; carrier gas; chemical vapor deposition; low temperature; monolayer molybdenum disulfide synthesis; optical microscopy; perylene-3, 4, 9, lO-tetracarboxylic dianhydride; seed promoter concentration; temperature 650 C; Atom optics; Chemicals; Optical imaging; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153399

Filename

7153399