Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

Author

Chen, Chun-Yuan ; Uang, Chii-Maw ; Cheng, Shiou-Ying ; Chuang, Hung-Ming ; Fu, Ssu-I ; Tsai, Ching-Hsiu ; Chang, Chi-Yuan ; Wen-Chau Liu

Author_Institution

Dept. of Electr. Eng., Cheng Kung Univ., Tainan, Taiwan

fYear

2004

fDate

15-16 March 2004

Firstpage

220

Lastpage

223

Abstract

The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10^-12 to 10^-1A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9 × 10^-12A (1.56 × 10^-7 A/cm²). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; surface recombination; 2 V; 40 mV; 5 V; DC performances; InP/InGaAs tunneling emitter bipolar transistor; common-base breakdown voltages; common-emitter breakdown voltages; extremely wide collector current regime; ultra-low collector current; Bipolar transistors; Charge carrier processes; Electron emission; Electron mobility; FETs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; PHEMTs; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on

Print_ISBN

0-7803-8191-2

Type

conf

DOI

10.1109/IWJT.2004.1306799

Filename

1306799