Research for SiGe HBT

Author

Liu, Rongkan ; Liu, Daoguang ; Koenig, Ulf ; Gruhle, Adreas ; Zhang, Jing ; Li, Kaicheng ; Liu, Luncai ; Kibbel, Horst ; Zeiler, Ulrich ; Liu, Yukui ; Xu, Shiliu ; Hu, Gangyi

Author_Institution

Nat. Labs of Analog IC, Chongqing, China

fYear

2004

fDate

15-16 March 2004

Firstpage

249

Lastpage

252

Abstract

In this paper, a SiGe HBT was described, which was based on a unique process technology. To characterize the SiGe HBT, HP8510C network analyzer, HP83650A synthetic signal sources, HP8517b S parameter measuring systems etc. have been used for radio frequency performances. The measurements showed the satisfactory results. The SiGe HBT cutoff frequency f_T is 108GHz, and the maximum oscillation frequency f_Max is 157GHz.

Keywords

Ge-Si alloys; S-parameters; etching; heterojunction bipolar transistors; millimetre wave bipolar transistors; photoresists; 108 GHz; 157 GHz; Gummel plots; HBT process technology; S parameter; SiGe; air-bridge technology; base-emitter self-alignment technology; cutoff frequency; etching; high current gain; maximum oscillation frequency; mesa structure; metal masking; positive photoresist; radio frequency performances; Cutoff frequency; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Performance analysis; RF signals; Radio frequency; Scattering parameters; Signal analysis; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on

Print_ISBN

0-7803-8191-2

Type

conf

DOI

10.1109/IWJT.2004.1306846

Filename

1306846