DocumentCode :
3086753
Title :
Future scaling of Si based microelectronics and the role of consortia
Author :
Jammy, Raj
Author_Institution :
Materials and Emerging Technologies, Sematech, USA
fYear :
2011
fDate :
1-3 June 2011
Firstpage :
1
Lastpage :
1
Abstract :
Summary form only given. Semiconductor technology and its relentless scaling are at the core of many of the revolutionary gains humanity has witnessed in the last few decades. Future scaling options are promising, although complex and costly. Planar, Si-based materials integration for ever smaller devices has matured to heterointegration of non-Si materials today, and rapidly, scaling is moving to the 3rd dimension for devices and interconnects. Patterning technologies are pushing the limits of immersion-based deep UV technologies and are at the cusp of EUV technologies. Several options like nano imprint and directed self assembly are emerging to address cost and throughput issues.
Keywords :
integrated circuit manufacture; nanofabrication; nanolithography; nanopatterning; self-assembly; silicon; ultraviolet lithography; Consortia; EUV technologies; SEMATECH; Si; directed self assembly; immersion based deep UV technologies; nanoimprint; patterning technologies; scaling; semiconductor technology; silicon based materials; silicon based microelectronics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Technologies Beyond 2020 (TTM), 2011 IEEE Technology Time Machine Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4577-0415-4
Electronic_ISBN :
978-1-4577-0416-1
Type :
conf
DOI :
10.1109/TTM.2011.6005167
Filename :
6005167
Link To Document :
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