Title :
High electron mobility (>16 cm2/Vsec) FETs with high on/off ratio (>106) and highly conductive films (σ>102 S/cm) by chemical doping in very thin (∼20 nm) TiO2 films
Author :
Oike, Go ; Yajima, Tamotsu ; Nishimura, T. ; Nagashio, K. ; Toriumi, A.
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
We have investigated electrical conduction of TiO2 films by both field-effect and chemical doping. We report that FET characteristics of TiO2 are affected very much by PDA condition and that its conductivity is also significantly increased by chemical doping. The results are quite promising for both TFT and transparent electrode applications of TiO2.
Keywords :
electron mobility; field effect transistors; silicon compounds; titanium compounds; FET characteristics; PDA condition; SiO2; TFT; TiO2; chemical doping; conductive films; electrical conduction; electron mobility; field-effect; transparent electrode applications; Conductivity; Doping; Electrodes; Field effect transistors; Films; Iron; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724610
