DocumentCode
3087261
Title
Exploring the design space of non-planar channels: Shape, orientation, and strain
Author
Stanojevic, Zlatan ; Karner, M. ; Kosina, Hans
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear
2013
fDate
9-11 Dec. 2013
Abstract
We conduct a comprehensive simulation study of non-planar n-type channels based on consistent, physical models containing measurable quantities rather than fit-parameters. This contrasts empirical thin-body models used in classical/quantum-corrected TCAD. The method involves the self-consistent solution of the two-dimensional Schrödinger-Poisson system, combined with linearized Boltzmann transport in the third dimension. We advance the art of simulation by (i) introducing quantum simulation on unstructured meshes for arbitrary geometries, (ii) providing an efficient framework for rapid evaluation of device designs, and (iii) contributing a surface roughness scattering model for arbitrarily shaped surfaces. Consistent modeling allows us to make reliable assertions with respect to device performance.
Keywords
MOSFET; Schrodinger equation; semiconductor device models; surface roughness; arbitrary geometries; classical TCAD; linearized Boltzmann transport; nonplanar n type channels; quantum corrected TCAD; self consistent solution; surface roughness scattering model; thin body models; two dimensional Schrodinger Poisson system; unstructured meshes; Data models; Rough surfaces; Scattering; Shape; Silicon; Strain; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location
Washington, DC
Type
conf
DOI
10.1109/IEDM.2013.6724618
Filename
6724618
Link To Document