• DocumentCode
    3087261
  • Title

    Exploring the design space of non-planar channels: Shape, orientation, and strain

  • Author

    Stanojevic, Zlatan ; Karner, M. ; Kosina, Hans

  • Author_Institution
    Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Abstract
    We conduct a comprehensive simulation study of non-planar n-type channels based on consistent, physical models containing measurable quantities rather than fit-parameters. This contrasts empirical thin-body models used in classical/quantum-corrected TCAD. The method involves the self-consistent solution of the two-dimensional Schrödinger-Poisson system, combined with linearized Boltzmann transport in the third dimension. We advance the art of simulation by (i) introducing quantum simulation on unstructured meshes for arbitrary geometries, (ii) providing an efficient framework for rapid evaluation of device designs, and (iii) contributing a surface roughness scattering model for arbitrarily shaped surfaces. Consistent modeling allows us to make reliable assertions with respect to device performance.
  • Keywords
    MOSFET; Schrodinger equation; semiconductor device models; surface roughness; arbitrary geometries; classical TCAD; linearized Boltzmann transport; nonplanar n type channels; quantum corrected TCAD; self consistent solution; surface roughness scattering model; thin body models; two dimensional Schrodinger Poisson system; unstructured meshes; Data models; Rough surfaces; Scattering; Shape; Silicon; Strain; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2013 IEEE International
  • Conference_Location
    Washington, DC
  • Type

    conf

  • DOI
    10.1109/IEDM.2013.6724618
  • Filename
    6724618