A 22–39 GHz Passive mixer in SiGe:C bipolar technology

Author

Issakov, Vadim ; Knapp, Herbert ; Wojnowski, Maciej ; Thiede, Andreas ; Simbürger, Werner

Author_Institution

Dept. of High-Freq. Electron., Univ. of Paderborn, Paderborn, Germany

fYear

2010

fDate

23-28 May 2010

Firstpage

1012

Lastpage

1015

Abstract

Numerous industrial and automotive applications pose challenging requirements on receiver front-end linearity and DC power consumption. A convenient solution is the implementation of passive mixers. This is usually realized at microwave frequencies using diodes. This paper presents an on-chip integrated single-balanced passive mixer in Infineon´s B7HF200 SiGe:C technology. The topology uses diode-connected npn transistors and a hybrid ring coupler implemented using onchip lumped elements. The mixer offers a good conversion loss below 10 dB over a very wide frequency range of 22 - 39 GHz at a moderate LO power of 3 dBm. The circuit exhibits an inputreferred 1dB compression point of -1.5 dBm and an IIP3 of 8.8 dBm. The chip size including the pads is 0.33 mm². This passive bipolar mixer is integrated in SiGe:C technology without a Schottky diode option.

Keywords

Ge-Si alloys; Schottky diode mixers; carbon; microwave diodes; microwave mixers; DC power consumption; Infineon´s B7HF200 technology; Schottky diode; SiGe:C; automotive applications; bipolar technology; diode-connected npn transistors; diodes; frequency 22 GHz to 39 GHz; hybrid ring coupler; industrial applications; microwave frequencies; on-chip integrated single-balanced passive mixer; onchip lumped elements; receiver front-end linearity; Automotive applications; Circuit topology; Coupling circuits; Energy consumption; Integrated circuit technology; Linearity; Microwave frequencies; Microwave transistors; Mixers; Schottky diodes; Lumped element microwave circuits; MMIC mixers; bipolar integrated circuits; microwave mixers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5514827

Filename

5514827