DocumentCode
3087352
Title
A SiC hybrid operational amplifier for 350°C operation
Author
Tomana, M. ; Johnson, R.W. ; Jaeger, R.C. ; Palmour, John
Author_Institution
Dept of Electr. Eng., Auburn Univ., AL, USA
fYear
1992
fDate
18-20 May 1992
Firstpage
157
Lastpage
161
Abstract
A basic operational amplifier has been fabricated and tested using n-channel SiC MESFETs. An open-loop gain exceeding 63 dB has been achieved over the temperature range of 25-365°C with a unity gain-bandwidth of between 175 and 250 kHz
Keywords
Schottky gate field effect transistors; hybrid integrated circuits; operational amplifiers; semiconductor materials; silicon compounds; 175 to 250 kHz; 25 to 365 degC; 350 degC; hybrid operational amplifier; n-channel MESFETs; open-loop gain; unity gain-bandwidth; Differential amplifiers; Etching; MESFETs; Ohmic contacts; Operational amplifiers; Silicon carbide; Temperature; Thick films; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 1992. Proceedings., 42nd
Conference_Location
San Diego, CA
Print_ISBN
0-7803-0167-6
Type
conf
DOI
10.1109/ECTC.1992.204200
Filename
204200
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