Title :
High-performance multi-stage graphene RF receiver integrated circuit
Author :
Shu-Jen Han ; Valdes Garcia, A. ; Oida, Soushi ; Jenkins, Keith A. ; Haensch, Wilfried
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
With the rapid advances in graphene field-effect transistor (GFET) performances, graphene has attracted much interest as a future channel material in RF electronics. However, the pace of the development of graphene circuits seems significantly slower. Several graphene circuits demonstrated today showing promising GHz functions still relied on ideal discrete passive components connected at the equipment level, and these circuits are limited to single transistor designs [1-3]. To compete with existing technologies requires that all active and passive components be monolithically integrated for not only the small circuit footprint and low cost but also high circuit complexity and advanced system functionality.
Keywords :
circuit complexity; field effect transistors; graphene; radiofrequency integrated circuits; C; GFET; RF electronics; active components; channel material; circuit complexity; circuit footprint; discrete passive components; graphene field-effect transistor; integrated circuit; multistage graphene RF receiver; single transistor designs; Gain; Graphene; Integrated circuits; Logic gates; Radio frequency; Receivers; Transistors;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724665