DocumentCode
3089073
Title
CMOS Schottky diode microwave power detector fabrication, SPICE modeling, and applications
Author
Jeon, Woochul ; Melngailis, John ; Newcomb, Robert W.
Author_Institution
Inst. for Res. in Electron. & Appl. Phys., Maryland Univ., College Park, MD, USA
fYear
2006
fDate
17-19 Jan. 2006
Abstract
CMOS Schottky diodes with various contact areas and geometries were fabricated through 0.35μ CMOS process. Fabricated diodes were tested under DC and RF direct injection. Based on the measured result, a CMOS Schottky diode SPICE model is suggested and simulated. The suggested SPICE model is used for designing charge pump circuits and a low-voltage reference circuit.
Keywords
Schottky diodes; microwave diodes; semiconductor device models; 0.35 micron; CMOS Schottky diode; DC direct injection; RF direct injection; SPICE modeling; charge pump circuits; low-voltage reference circuit; microwave power detector; CMOS process; Circuit simulation; Circuit testing; Detectors; Fabrication; Geometry; Radio frequency; SPICE; Schottky diodes; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Design, Test and Applications, 2006. DELTA 2006. Third IEEE International Workshop on
Print_ISBN
0-7695-2500-8
Type
conf
DOI
10.1109/DELTA.2006.22
Filename
1581181
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