Depletion-mode Ga2O3 MOSFETs on β-Ga2O3 (010) substrates with Si-ion-implanted channel and contacts

Author

Higashiwaki, Masataka ; Sasaki, Kazuhiko ; Man Hoi Wong ; Kamimura, Taeko ; Krishnamurthy, Dheepak ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, Shigenobu

Author_Institution

Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan

fYear

2013

fDate

9-11 Dec. 2013

Abstract

Depletion-mode Ga₂O₃ MOSFETs were fabricated on single-crystal β-Ga₂O₃ (010) substrates. We applied Si-ion implantation to the ohmic contacts for low contact resistance as well as to the channel layer for reliable doping. An Al₂O₃ gate dielectric film formed by atomic layer deposition passivated the device surface and significantly reduced gate leakage. The MOSFETs with a simple structure exhibited complete channel pinch-off with a breakdown voltage of 415 V and a drain current on/off ratio of ten orders of magnitude at room temperature. The devices also showed stable operation up to 250°C.

Keywords

MOSFET; aluminium compounds; atomic layer deposition; contact resistance; elemental semiconductors; gallium compounds; ion implantation; ohmic contacts; passivation; silicon; Al₂O₃; Ga₂O₃; Si; atomic layer deposition; channel layer; channel pinch off; depletion mode MOSFET; device surface; gate dielectric film; ion implanted channel; low contact resistance; ohmic contacts; reduced gate leakage; reliable doping; single crystal substrates; voltage 415 V; Crystals; MOSFET; Molecular beam epitaxial growth; Silicon; Substrates; Temperature; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724713

Filename

6724713