DocumentCode
3089808
Title
Key issues and techniques for characterizing time-dependent device-to-device variation of SRAM
Author
Duan, M. ; Zhang, Jian F. ; Ji, Zhen ; Ma, J.G. ; Zhang, Wensheng ; Kaczer, Ben ; Schram, T. ; Ritzenthaler, R. ; Groeseneken, Guido ; Asenov, Asen
Author_Institution
Sch. of Eng., Liverpool John Moores Univ., Liverpool, UK
fYear
2013
fDate
9-11 Dec. 2013
Abstract
Discreteness of aging-induced charges causes a Time-dependent Device-to-Device Variation (TDDV) and SRAM is vulnerable to it. This work analyses the shortcomings of existing methods for SRAM application and propose a new technique for its characterization. The key issues addressed include the SRAM-relevant sensing Vg, measurement speed, capturing the maximum degradation, separating device-to-device variation from within-device fluctuation, sampling rate, time window, and test device numbers.
Keywords
SRAM chips; ageing; integrated circuit modelling; negative bias temperature instability; SRAM application; SRAM-relevant sensing; TDDV; aging-induced charges; maximum degradation; measurement speed; sampling rate; test device numbers; time window; time-dependent device-to-device variation; within-device fluctuation; Aging; Degradation; Fluctuations; Monitoring; Random access memory; Stress; Video recording;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location
Washington, DC
Type
conf
DOI
10.1109/IEDM.2013.6724730
Filename
6724730
Link To Document