DocumentCode :
3090067
Title :
Analysis of transistor characteristics in distribution tails beyond ±5.4σ of 11 billion transistors
Author :
Mizutani, Tomoko ; Kumar, Ajit ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
fYear :
2013
fDate :
9-11 Dec. 2013
Abstract :
Transistors in distribution tails of 11G (11 billion) transistors were intensively measured and compared with transistors in the center of distribution. It is found that, while VTH defined by subthreshold constant current (VTHC) deviates from the normal distribution, extrapolated VTH (VTHEX) roughly follows the normal distribution. It is also found that some transistors show extraordinary low on-current (ION) which deviates from the normal distribution. The origin of abnormal distribution and the impact on yield loss are discussed based on measured results and 3D device simulation.
Keywords :
VLSI; field effect transistors; 11 billion FET; 3D device simulation; VLSI; distribution tails; subthreshold constant current; transistor characteristic analysis; yield loss; Correlation; Current measurement; Degradation; Field effect transistors; Gaussian distribution; Semiconductor device measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
Type :
conf
DOI :
10.1109/IEDM.2013.6724743
Filename :
6724743
Link To Document :
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