Title :
IGBT turn-off characteristics explained through measurements and device simulation
Author :
Venkatesan, Vasu ; Eshaghi, Majid ; Borras, Rodrigo ; Deuty, Scott
Author_Institution :
Motorola Inc., Phoenix, AZ, USA
Abstract :
IGBT turn-off waveforms have identifiable slope changes and particularities that can be attributed to device structure and circuit conditions. These phenomena are analyzed from test fixture results and actual application measurements. Physical relation of the device structure to the simulated and measured waveforms is presented allowing designers to interpret the effects of device structure on turn-off characteristics and ultimately the effects on switching losses. Based on the results presented, IGBTs can be optimized for various switching applications. All the pertinent parameters are extensively characterized. The double sloped VCE rise, the ICE pocket and current tail are emphasized for analysis as a function of electrical and thermal input parameters
Keywords :
digital simulation; electronic engineering computing; insulated gate bipolar transistors; losses; power semiconductor switches; semiconductor device models; semiconductor device testing; simulation; ICE pocket; IGBT turn-off characteristics; application measurements; circuit conditions; current tail; device structure; double sloped VCE rise; electrical input parameters; measured waveforms; simulated waveforms; slope changes; switching losses; test fixture results; thermal input parameters; Circuit simulation; Circuit testing; Fixtures; Inductors; Insulated gate bipolar transistors; Particle measurements; Power measurement; Tail; Temperature; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1997. APEC '97 Conference Proceedings 1997., Twelfth Annual
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-3704-2
DOI :
10.1109/APEC.1997.581450
