DocumentCode :
3092910
Title :
Small embeddable NBTI sensors (SENS) for tracking on-chip performance decay
Author :
Cabe, Adam C. ; Qi, Zhenyu ; Wooters, Stuart N. ; Blalock, Travis N. ; Stan, Mircea R.
Author_Institution :
Univ. of Virginia, Charlottesville, VA
fYear :
2009
fDate :
16-18 March 2009
Firstpage :
1
Lastpage :
6
Abstract :
On-chip circuit aging sources, like negative bias temperature instability (NBTI), hot-carrier injection (HCI), electromigration, and oxide breakdown, are reducing expected chip lifetimes. Being able to track the actual aging process is one way to avoid unnecessarily large design margins. This work proposes a sensing scheme that uses sets of reliability sensors capable of accurately tracking NBTI PMOS current degradations across process, temperature, and varying activity factors. We show that a set of 1000 such small sensors can predict chip lifetime to an uncertainty of 7% to 10%. We also show that, once the total area dedicated to sensing is chosen, the lifetime prediction uncertainty is almost insensitive to the tradeoff between the number of sensors and the area of each individual sensor.
Keywords :
MOS integrated circuits; electromigration; hot carriers; PMOS current degradations; electromigration; hot-carrier injection; lifetime prediction uncertainty; on-chip circuit aging sources; on-chip performance decay tracking; oxide breakdown; small embeddable negative bias temperature instability sensors; Aging; Circuits; Electromigration; Hot carrier injection; Human computer interaction; Negative bias temperature instability; Niobium compounds; Temperature sensors; Titanium compounds; Uncertainty; Circuit Reliability; DFM; NBTI;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality of Electronic Design, 2009. ISQED 2009. Quality Electronic Design
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2952-3
Electronic_ISBN :
978-1-4244-2953-0
Type :
conf
DOI :
10.1109/ISQED.2009.4810261
Filename :
4810261
Link To Document :
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