Title :
NBTI-aware statistical circuit delay assessment
Author :
Vaidyanathan, Balaji ; Oates, Anthony S. ; Xie, Yuan ; Wang, Yu
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu
Abstract :
This work establishes an analytical model framework to account for the NBTI aging effect on statistical circuit delay distribution. In this paper, we explain how circuit NBTI mitigation techniques can account for this extra variability and further present the impact of statistical PMOS NBTI DC-lifetime variability on the product delay spread.
Keywords :
CMOS integrated circuits; delays; integrated circuit reliability; NBTI aging effect; circuit NBTI mitigation techniques; negative bias temperature instability; product delay spread; reliability; statistical PMOS NBTI DC-lifetime variability; statistical circuit delay distribution; Aging; CMOS technology; Circuits; Degradation; Delay effects; Equations; Niobium compounds; Stress; Titanium compounds; Virtual manufacturing;
Conference_Titel :
Quality of Electronic Design, 2009. ISQED 2009. Quality Electronic Design
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2952-3
Electronic_ISBN :
978-1-4244-2953-0
DOI :
10.1109/ISQED.2009.4810263
