• DocumentCode
    3095016
  • Title

    Latest technology improvements of Mitsubishi IGBT modules

  • Author

    Medaule, Daniel ; Arita, Yasunoba ; Yu, Yoshiharu

  • Author_Institution
    Mitsubishi Electr. Europe GmbH, Argentre du Plessis, France
  • fYear
    1996
  • fDate
    35237
  • Firstpage
    42491
  • Lastpage
    42495
  • Abstract
    IGBTs are now widely used due to the possibility of high frequency, voltage drive, and extensive line up. The IGBT module “U Series”, described in this paper, is a new device having the maximum of the third generation chip performance mounted in a new low inductance package with a new fast soft recovery diode. Lower voltage spikes and solder less connections provide higher reliability. The pioneering concept of the IPM (Intelligent Power Module) was introduced in 1990 by MELCO. Since then, several generations have been introduced. Following the same packaging concept, the new “V Series” is described. For traction applications, a strong demand for high voltage high reliability IGBTs has emerged; the paper will show the H.V. IGBT line up and development schedule. IGBT waveforms, data and behaviour are described
  • Keywords
    modules; Mitsubishi IGBT modules; U Series; V Series; high voltage IGBTs; intelligent power modules; packaging; reliability; soft recovery diode; solderless connections; third generation chip; traction applications; voltage spikes;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    New Developments in Power Semiconductor Devices, IEE Colloquium on (Digest No: 1996/046)
  • Conference_Location
    London
  • Type

    conf

  • DOI
    10.1049/ic:19960862
  • Filename
    576398