DocumentCode :
3095393
Title :
A novel broadband Doherty power amplifier with post-matching structure
Author :
Xiaofan Chen ; Wenhua Chen
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
fYear :
2012
fDate :
4-7 Dec. 2012
Firstpage :
370
Lastpage :
372
Abstract :
To enhance the bandwidth of Doherty power amplifiers (DPAs), a novel broadband design method of DPA, so-called post-matching structure, is proposed. The harmonics coupling between Carrier PA and Peak PA is also studied, and suppressed by utilizing harmonic short circuit. Finally, a DPA utilizing 10W GaN HEMT with post-matching structure is designed and implemented, the simulated and measured results show that the proposed DPA exhibits good broadband efficiency performance over the wide frequency range of 800MHz to 1200MHz, it achieves a fractional bandwidth of 40% with the PAE of better than 25% at 6dB back-off from the saturated power.
Keywords :
III-V semiconductors; gallium compounds; harmonics; impedance matching; power amplifiers; wide band gap semiconductors; GaN; HEMT; broadband Doherty power amplifier; broadband design method; harmonic short circuit; harmonics coupling; postmatching structure; power 10 W; Bandwidth; Broadband amplifiers; Harmonic analysis; Impedance; Passive optical networks; Power amplifiers; Doherty; GaN HEMT; bandwidth; broadband; harmonic short; power amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings (APMC), 2012 Asia-Pacific
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4577-1330-9
Electronic_ISBN :
978-1-4577-1331-6
Type :
conf
DOI :
10.1109/APMC.2012.6421601
Filename :
6421601
Link To Document :
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