DocumentCode
3095402
Title
1 M-cell 6b/cell analog flash memory for digital storage
Author
Rolandi, P.L. ; Canegallo, R. ; Chioffi, E. ; Gema, D. ; Guaitini, G. ; Issartel, C. ; Lhermet, F. ; Pasotti, M. ; Kramer, A.
Author_Institution
SGS-Thomson Microelectron., Agrate Brianza, Italy
fYear
1998
fDate
5-7 Feb. 1998
Firstpage
334
Lastpage
335
Abstract
This standard flash-EEPROM contains 1 M cells with multi-level programming of up to 64 digital levels per cell, providing a prototype of a 6 Mb memory with 257 Mb/cm/sup 2/ array density.
Keywords
analogue storage; 6 Mbit; analog flash memory; array density; digital storage; multi-level programming; standard flash-EEPROM; Circuits; Flash memory; Phased arrays; Q measurement; Size measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1998. Digest of Technical Papers. 1998 IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
0193-6530
Print_ISBN
0-7803-4344-1
Type
conf
DOI
10.1109/ISSCC.1998.672498
Filename
672498
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