Antenna damage from a plasma TEOS deposition reactor: Relationship with surface charge and RF sensor measurements

Author

Gupta, Indus J. ; Taylor, Kelly ; Buck, Dave ; Krishnan, Srikanth

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1997

fDate

13-16 Oct 1997

Firstpage

26

Lastpage

30

Abstract

We identified antenna damage associated with a PECVD (plasma enhanced chemical vapor deposition) TEOS (tetraethoxysilane) process for interlevel dielectric deposition. The damage was isolated to the terminating steps in the recipe depositing 1000 Å of SiO₂. V_s (surface charge) measurements on the Keithley Quantox along with our CMOS test chip were used for further characterization of the terminating steps. At the same time, an RF sensor was used to identify the plasma characteristics of the chamber. A design of experiments was done around the RF power and chuck-to-wafer spacing in the terminating sequence in order to minimize damage to the antenna

Keywords

CMOS integrated circuits; design of experiments; dielectric thin films; electric sensing devices; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; integrated circuit yield; oxidation; plasma CVD; surface charging; 1000 angstrom; CMOS test chip; Keithley Quantox measurements; PECVD; PECVD TEOS process; RF power; RF sensor; RF sensor measurements; Si; SiO₂ deposition; SiO₂-Si; antenna damage; antenna damage minimization; chamber plasma characteristics; chuck-to-wafer spacing; design of experiments; interlevel dielectric deposition; plasma TEOS deposition reactor; plasma enhanced chemical vapor deposition; surface charge; terminating sequence; terminating steps; tetraethoxysilane; Antenna measurements; Charge measurement; Chemical vapor deposition; Current measurement; Dielectric measurements; Inductors; Plasma chemistry; Plasma measurements; Radio frequency; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 1997 IEEE International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-4205-4

Type

conf

DOI

10.1109/IRWS.1997.660276

Filename

660276