Title :
Differential phase shift keying SAW correlator on GaAs
Author :
Moeller, F. ; Enderleid, J.
Author_Institution :
RF Monolithics, Dallas, TX, USA
Abstract :
The present Differential Phase Shift Keying (DPSK) modulation format allows noncoherent data demodulation while the SAW device correlator acts as a despreading operator. Compared to the conventional technique of using two correlators and a one data bit delay element, the combination of two in-line correlators has the advantage of an inherent one data bit delay, less insertion loss and minor signal distortion due to usage of a single SAW device. The DPSK correlator is fabricated on a (100) cut GaAs substrate with SAW propagation in the ⟨110⟩ direction. Using this cut, Rayleigh waves have been generated with a piezoelectric coupling coefficient of the same order as ST-quartz. The piezoelectric semiconductor GaAs is very interesting in terms of monolithic integration of very fast electronic devices and surface acoustic wave modules on the same substrate. Results of first experiments towards integration of the DPSK correlator receiver as part of a signal processor, in both the time and frequency domains, are presented and compared to computer predictions
Keywords :
III-V semiconductors; Rayleigh waves; S-parameters; differential phase shift keying; frequency-domain analysis; gallium arsenide; piezoelectric semiconductors; radio receivers; spread spectrum communication; surface acoustic wave correlation; time-domain analysis; 〈110〉 direction SAW propagation; (100) cut GaAs substrate; DPSK SAW correlator; GaAs; Rayleigh waves; S-parameters; despreading operator; differential phase shift keying; frequency domain; in-line correlators; insertion loss; monolithic integration; noncoherent data demodulation; one data bit delay; piezoelectric coupling coefficient; piezoelectric semiconductor; signal distortion; signal processor; single SAW device; spread spectrum systems; time domain; Correlators; Delay; Demodulation; Differential phase shift keying; Differential quadrature phase shift keying; Gallium arsenide; Modulation; Substrates; Surface acoustic wave devices; Surface acoustic waves;
Conference_Titel :
Ultrasonics Symposium, 1996. Proceedings., 1996 IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
0-7803-3615-1
DOI :
10.1109/ULTSYM.1996.583780