DocumentCode
309599
Title
The influence of transducer metalization on SAW resonator electrical performance
Author
Zhu, J.W. ; Montress, G.K. ; Greer, J.A. ; Andres, D. ; Parker, T.E.
Author_Institution
Electron. Syst. Labs., Raytheon Co., Lexington, MA, USA
Volume
1
fYear
1996
fDate
3-6 Nov 1996
Firstpage
277
Abstract
The results of an investigation to establish whether the interdigital transducer (IDT) finger metalization was the source of observed flicker (1/f) noise levels in high performance SAW resonator devices are described. Several alterations to the basic IDT finger metal deposition technique were used in order to vary the grain size in copper-doped aluminum thin-films. Grain size was varied over approximately a 3:1 range (~0.25 μm to ~0.09 μm) by changing the background O2 pressure during transducer metal deposition. In addition, the influence of grain size was examined in conjunction with compositional differences through the addition of Si or Ti as dopants in the copper-doped aluminum thin-films. The electrical performance (e.g., residual flicker (1/f) noise, loaded-Q, unloaded-Q, and turn-over temperature) for more than one-hundred devices was characterized, and a number of samples were analyzed using transmission electron microscopy (TEM) to examine the corresponding microstructure of the transducers´ finger metalization. Although a correlation between average grain size and residual flicker (1/f) noise was not found, the experimental techniques provide the basis for further investigations into the source, or sources, of flicker (1/f) noise in SAW resonator devices
Keywords
1/f noise; Q-factor; flicker noise; grain size; interdigital transducers; metallisation; surface acoustic wave resonators; surface acoustic wave transducers; transmission electron microscopy; 1/f noise; Al-Cu; Q-factor; SAW resonator; composition; copper-doped aluminum thin film; electrical characteristics; flicker noise; grain size; interdigital transducer finger metalization; metal deposition; microstructure; transmission electron microscopy; turn-over temperature; 1f noise; Aluminum; Fingers; Grain size; Noise level; Semiconductor thin films; Surface acoustic waves; Temperature; Thin films; Transducers;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 1996. Proceedings., 1996 IEEE
Conference_Location
San Antonio, TX
ISSN
1051-0117
Print_ISBN
0-7803-3615-1
Type
conf
DOI
10.1109/ULTSYM.1996.583973
Filename
583973
Link To Document