Title :
A new technique to extract TDDB acceleration parameters from fast Q bd tests
Author :
Chen, Yuan ; Suehle, John S. ; Shen, Bruce ; Bernstein, Joseph ; Messick, Cleston ; Chaparala, Prasad
Author_Institution :
Center for Reliability Eng., Maryland Univ., College Park, MD, USA
Abstract :
A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant current injection breakdown tests. This is the first time that an accurate correlation of the highly accelerated breakdown tests to long-term TDDB tests has been presented
Keywords :
dielectric thin films; electric breakdown; electric current; integrated circuit reliability; integrated circuit testing; life testing; Si; SiO2-Si; TDDB acceleration parameter extraction; accelerated constant current injection breakdown tests; charge-to-breakdown tests; constant voltage stress time-dependent dielectric breakdown; gate oxide reliability; highly accelerated breakdown tests; long-term TDDB tests; time-dependent dielectric breakdown acceleration parameters; Breakdown voltage; Design for quality; Dielectric breakdown; Electric breakdown; Electronic equipment testing; Life estimation; Life testing; Occupational stress; Semiconductor device testing; Thermal stresses;
Conference_Titel :
Integrated Reliability Workshop Final Report, 1997 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-4205-4
DOI :
10.1109/IRWS.1997.660287
