Title :
A 206–294GHz 3-stage amplifier in 35nm InP mHEMT, using a thin-film microstrip environment
Author :
Griffith, Zach ; Ha, W. ; Chen, Peng ; Kim, Dongkyu ; Brar, B.
Author_Institution :
Teledyne Scientific Company, Thousand Oaks, United States
Abstract :
We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 206–294GHz, formed by common-source configured 35nm Lg InP mHEMTs and a multi-layer thin-film microstrip (TFM) wiring environment. The amplifier S21 mid-band gain gain is 11–16dB, 3dB bandwidth at 294GHz, and 82.5mW Pdc. This is the first reported InP HEMT MMIC operating in G-,H-band employing thin-film microstrip. Because the TFM ground-plane shields the signal interconnects from the substrate, well behaved device (0.1–67, 140–200, 210–310GHz) and amplifier (210–320GHz) measurements are presented from an unthinned, 25mil substrate. The total size of this 3-stage amplifier is only 0.77mm × 0.40mm.
Keywords :
Frequency; Indium phosphide; MIMICs; MMICs; Microstrip; Substrates; Thin film circuits; Transistors; Wiring; mHEMTs;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5515340
