Frequency-configurable electronics

Author

Simin, Grigory ; Gaska, Remis

Author_Institution

EE Dept., Univ. of South Carolina, Columbia, SC, USA

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

The talk reviews new approaches to fabricating high-speed high-power electronic devices with frequency configurable elements. Such elements behave as conductors at low frequencies and as insulators at high frequencies. Frequency dependent impedance allows independently tune the DC, microwave or pulse device performance. We illustrate the frequency-configurable electrode techniques using its application to microwave switches, field-effect transistors with increased breakdown voltage and other high-power power high-frequency devices.

Keywords

conductors (electric); electrodes; gallium compounds; high electron mobility transistors; insulators; microwave switches; DC device performance; GaN HFET; breakdown voltage device; conductor; field-effect transistor; frequency configurable element; frequency dependent impedance; frequency-configurable electrode technique; frequency-configurable electronics; high-power power high-frequency device; high-speed high-power electronic device; insulator; microwave device performance; microwave switch; pulse device performance; Electrodes; HEMTs; Logic gates; MODFETs; Microwave circuits; Microwave transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135160

Filename

6135160