Design of CMOS synthetic transmission-line-based X-band active bandstop filter using E-shaped resonator

This paper presents a monolithic transmission-line-based double-mode active bandstop filter (BSF) fabricated in a standard 0.13-μm complementary metal-oxide-semiconductor (CMOS) technology. The proposed filter comprises an E-shaped double-mode resonator which is implemented with synthetic quasi-TEM transmission lines. The area of the proposed X-Band active BSF is 510 μm × 570 μm, in the dimension of 0.017 λ₀ × 0.019 λ₀, where λ₀ is the free space wavelength at 10 GHz. The measurement results, in good agreement with the simulated ones, demonstrate a rejection level of 22.87 dB at center frequency of 9.32 GHz and bandwidth of 4.5%. The total power consumption of this circuit is 1.09 mW.