Title :
Diagnostics of charged particles impinging on electrode in RF and microwave discharges
Author :
Chernoiziumskaya, T.V. ; Orlov, K.E. ; Smirnov, A.S.
Author_Institution :
Dept. of Plasma Phys., St. Petersburg State Tech. Univ., Russia
Abstract :
The main goal of the present work is to measure electron and ion fluxes on electrodes in RF and microwave discharges, and to determine discharge parameters and the mechanism of high frequency field absorption. We designed secondary electron diagnostics in a low pressure capacitive RF discharge and measured the sheath voltage waveform and electron density in the plasma region. Also, we established ion flux diagnostics of microwave discharges in a magnetic field. We studied the exciting wave polarization influence on flux intensity of ions impinging on the substrate. The results allow us to determine experimentally the pressure range where the electron cyclotron resonance (ECR) power absorption mechanism dominates
Keywords :
high-frequency discharges; plasma density; plasma diagnostics; plasma sheaths; plasma-wall interactions; secondary electron emission; 0.1 to 1 mtorr; 13.56 MHz; 15 to 100 W; 2.45 GHz; 3 to 90 mtorr; 500 W; RF discharge; charged particle diagnostics; discharge parameters; electrodes; electron cyclotron resonance power absorption mechanism; electron density; electron flux; exciting wave polarization; high frequency field absorption; ion flux diagnostics; ion flux intensity; low pressure capacitive RF discharge; magnetic field; microwave discharges; pressure range; secondary electron diagnostics; sheath voltage waveform; time resolved distribution function; Density measurement; Electrodes; Electromagnetic wave absorption; Electrons; Frequency measurement; Magnetic field measurement; Microwave measurements; Plasma measurements; Radio frequency; Voltage measurement;
Conference_Titel :
Electronics and Radiophysics of Ultra-High Frequencies, 1999. International University Conference Proceedings
Conference_Location :
St Petersburg
Print_ISBN :
5-7422-0083-8
DOI :
10.1109/UHF.1999.787928