DocumentCode
309805
Title
Dose control of MeV-implantation by photoluminescence heterodyne technique
Author
Wagner, M. ; Geiler, H.D. ; Funk, K.
Author_Institution
JenaWave Engn. & Consult., Jena, Germany
fYear
1996
fDate
16-21 Jun 1996
Firstpage
214
Lastpage
217
Abstract
Phosphorous ions were implanted in Si with energies from 0.3 MeV up to 2 MeV over a wide dose range. The implantation was carried out by use of an EATON NV-GSD/HE high energy implanter. A new nondestructive evaluation technique, the so called Photoluminescence Heterodyne technique (PLH) is applied to measure the damage density-dose correlation
Keywords
ion implantation; nondestructive testing; phosphorus; photoluminescence; production testing; silicon; 0.3 to 2 MeV; EATON NV-GSD/HE high energy implanter; Si:P; damage density-dose correlation; dose control; ion implantation; nondestructive evaluation technique; photoluminescence heterodyne technique; semiconductor device manufacture; Charge carrier lifetime; Density measurement; Frequency; Ion implantation; Laser beams; Luminescence; Monitoring; Optical modulation; Photoluminescence; Radiative recombination;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-3289-X
Type
conf
DOI
10.1109/IIT.1996.586188
Filename
586188
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