Title :
TaOX memresitive devices with ferromagnetic electrodes
Author :
Jang, Hyuk-Jae ; Shrestha, Pragya ; Kirillov, Oleg ; Baumgart, Helmut ; Cheung, Kin P. ; Jurchescu, Oana D. ; Richter, Curt A.
Author_Institution :
Semicond. & Dimensional Metrol. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
Recently, two-terminal metal-oxide-based devices showing memresitive behavior have been attracting much attention due to their promising characteristics for next generation memory and logic technologies [1]. Among different types of memresitive mechanisms, TaOX based devices combined with copper and platinum electrodes have been known to utilize metal precipitation to create conductive channel inside of the oxide thin film when a low electric voltage (only around 1V between top and bottom electrodes) is applied [1]-[3]. This unique mechanism can deliver an opportunity to explore a new type of multifunctional device; for example, the formed metal nano-filament inside of TaOX can be used as an electron spin transport channel [4].
Keywords :
copper; electron spin; ferromagnetic materials; memristors; platinum; tantalum compounds; TaOx; conductive channel; copper electrode; electron spin transport channel; ferromagnetic electrodes; memresitive devices; metal nanofilament; metal precipitation; multifunctional device; next generation logic technology; next generation memory technology; oxide thin film; platinum electrode; two-terminal metal oxide-based devices; Copper; Educational institutions; Electrodes; Switches; Temperature dependence; USA Councils; Voltage measurement;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135188
