Advanced contact and junction technologies for improved parasitic resistance and short channel immunity in FinFETs beyond 22nm node

Author

Ang, K.-W. ; Min, B.-G. ; Gunji, M. ; Hung, P.Y. ; Ok, I. ; Rodgers, M. ; Franca, D.L. ; Gausepohl, S. ; Hobbs, C. ; Kirsch, P.D. ; Jammy, R.

Author_Institution

SEMATECH, Albany, NY, USA

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

New approaches to achieve further improvement of the specific contact resistivity, ρ_c, by lowering the Schottky barrier height and/or enhancing the active dopant concentration using novel interface dipole engineering and in-situ doping techniques are investigated. Low ρ_c on the order of sub-10^-9 Ω-cm² is successfully demonstrated, and various interface dipole materials are screened and implemented in scaled FinFETs for contact resistance reduction, which leads to substantial improvements in drive current performance.

Keywords

MOSFET; Schottky barriers; contact resistance; doping profiles; FinFET; Schottky barrier height; active dopant concentration; contact resistance reduction; contact technology; drive current performance; in-situ doping technique; interface dipole engineering; interface dipole material; junction technology; parasitic resistance; short channel immunity; specific contact resistivity; Annealing; Doping; FinFETs; Junctions; Resistance; Silicon; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135201

Filename

6135201