DocumentCode
3099052
Title
A BIST scheme based on resistance match for current-mode R-2R ladder Digital-to-Analog Converter
Author
Jun, Yuan ; Masayoshi, Tachibana
Author_Institution
Electron. & Photonic Syst. Eng., Kochi Univ. of Technol., Kami, Japan
Volume
3
fYear
2011
fDate
11-13 March 2011
Firstpage
305
Lastpage
309
Abstract
This paper presents a Built-in Self-Test (BIST) scheme and its implementation for a current-mode R-2R ladder Digital-to-Analog Converter (DAC). The technique is based on the resistance match of the R-2R ladder in DAC. With the extra Design for Testability (DFT) circuits, test constant current follows into two resistance-matched branches, and the voltage drops on two branches of the resistor ladder change the voltage values at the inputs of the operational amplifier, which works as a comparator in the test mode. The output of the operational amplifier is employed for fault detection through a window comparator, which creates a pass/fail signature signal. The circuit-level simulation and experimental results of the BIST system for a 8-bit DAC in standard CMOS 0.18-μm technology are presented to demonstrate the feasibility of the proposed BIST scheme with fault coverage of 96% and area overhead of approximately 6%.
Keywords
CMOS integrated circuits; built-in self test; comparators (circuits); current-mode circuits; design for testability; digital-analogue conversion; integrated circuit testing; operational amplifiers; BIST scheme; built-in self-test; circuit-level simulation; current-mode R-2R ladder; design for testability circuits; digital-to-analog converter; fault detection; operational amplifier; resistance match; resistor ladder; size 0.18 mum; standard CMOS technology; window comparator; Built-in self-test; Circuit faults; Resistance; Resistors; Switches; Transistors; DAC-under-test; biult-in seft-test; design for testability; digital-to-analog converter;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer Research and Development (ICCRD), 2011 3rd International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-61284-839-6
Type
conf
DOI
10.1109/ICCRD.2011.5764201
Filename
5764201
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